IMW120R014M1HXKSA1 Infineon Technologies
Hersteller: Infineon TechnologiesSiC MOSFETs CoolSiC 1200 V, 14 mohm SiC Trench MOSFET in TO247-3 package
auf Bestellung 273 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 40.34 EUR |
| 10+ | 40.08 EUR |
| 25+ | 34.72 EUR |
| 240+ | 34.71 EUR |
| 480+ | 30.1 EUR |
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Technische Details IMW120R014M1HXKSA1 Infineon Technologies
Description: SIC DISCRETE, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 127A (Tc), Rds On (Max) @ Id, Vgs: 18.4mOhm @ 54.3A, 18V, Power Dissipation (Max): 455W (Tc), Vgs(th) (Max) @ Id: 5.2V @ 23.4mA, Supplier Device Package: PG-TO247-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +20V, -5V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 4580 pF @ 800 V.
Weitere Produktangebote IMW120R014M1HXKSA1 nach Preis ab 28.91 EUR bis 79.75 EUR
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IMW120R014M1HXKSA1 | Hersteller : Infineon Technologies |
Description: SIC DISCRETE Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 127A (Tc) Rds On (Max) @ Id, Vgs: 18.4mOhm @ 54.3A, 18V Power Dissipation (Max): 455W (Tc) Vgs(th) (Max) @ Id: 5.2V @ 23.4mA Supplier Device Package: PG-TO247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +20V, -5V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 4580 pF @ 800 V |
auf Bestellung 238 Stücke: Lieferzeit 10-14 Tag (e) |
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| IMW120R014M1HXKSA1 | Hersteller : Infineon Technologies |
Silicon Carbide Power Mosfet |
auf Bestellung 480 Stücke: Lieferzeit 14-21 Tag (e) |
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| IMW120R014M1HXKSA1 | Hersteller : Infineon Technologies |
Silicon Carbide Power Mosfet |
auf Bestellung 480 Stücke: Lieferzeit 14-21 Tag (e) |
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| IMW120R014M1HXKSA1 | Hersteller : Infineon Technologies |
Silicon Carbide Power Mosfet |
auf Bestellung 228 Stücke: Lieferzeit 14-21 Tag (e) |
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| IMW120R014M1HXKSA1 | Hersteller : Infineon Technologies |
Silicon Carbide Power Mosfet |
auf Bestellung 228 Stücke: Lieferzeit 14-21 Tag (e) |
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| IMW120R014M1HXKSA1 | Hersteller : Infineon Technologies |
SP005425449 |
auf Bestellung 450 Stücke: Lieferzeit 14-21 Tag (e) |
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| IMW120R014M1HXKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 89.3A; Idm: 267.9A; 227W Drain-source voltage: 1.2kV Drain current: 89.3A On-state resistance: 27mΩ Type of transistor: N-MOSFET Power dissipation: 227W Polarisation: unipolar Kind of package: tube Technology: CoolSiC™; SiC Kind of channel: enhanced Gate-source voltage: -7...20V Pulsed drain current: 267.9A Mounting: THT Case: TO247 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| IMW120R014M1HXKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 89.3A; Idm: 267.9A; 227W Drain-source voltage: 1.2kV Drain current: 89.3A On-state resistance: 27mΩ Type of transistor: N-MOSFET Power dissipation: 227W Polarisation: unipolar Kind of package: tube Technology: CoolSiC™; SiC Kind of channel: enhanced Gate-source voltage: -7...20V Pulsed drain current: 267.9A Mounting: THT Case: TO247 |
Produkt ist nicht verfügbar |