IMDQ75R140M1HXUMA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 129mOhm @ 4.7A, 20V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 1.7mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 351 pF @ 500 V
auf Bestellung 632 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 9.06 EUR |
| 10+ | 8.14 EUR |
| 25+ | 7.7 EUR |
| 100+ | 6.67 EUR |
| 250+ | 6.33 EUR |
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Technische Details IMDQ75R140M1HXUMA1 Infineon Technologies
Description: SILICON CARBIDE MOSFET, Packaging: Tape & Reel (TR), Package / Case: 22-PowerBSOP Module, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiC (Silicon Carbide Junction Transistor), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Tc), Rds On (Max) @ Id, Vgs: 129mOhm @ 4.7A, 20V, Power Dissipation (Max): 100W (Tc), Vgs(th) (Max) @ Id: 5.6V @ 1.7mA, Supplier Device Package: PG-HDSOP-22-1, Drive Voltage (Max Rds On, Min Rds On): 15V, 20V, Vgs (Max): +23V, -5V, Drain to Source Voltage (Vdss): 750 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 351 pF @ 500 V.
Weitere Produktangebote IMDQ75R140M1HXUMA1 nach Preis ab 4.52 EUR bis 9.17 EUR
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IMDQ75R140M1HXUMA1 | Hersteller : Infineon Technologies |
SiC MOSFETs Y |
auf Bestellung 738 Stücke: Lieferzeit 10-14 Tag (e) |
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IMDQ75R140M1HXUMA1 | Hersteller : INFINEON |
Description: INFINEON - IMDQ75R140M1HXUMA1 - Siliziumkarbid-MOSFET, n-Kanal, 17 A, 750 V, 0.182 ohm, HDSOP tariffCode: 85412900 Drain-Source-Spannung Vds: 750V rohsCompliant: YES Dauer-Drainstrom Id: 17A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 5.6V euEccn: NLR Verlustleistung: 100W Bauform - Transistor: HDSOP Anzahl der Pins: 22Pin(s) Produktpalette: CoolSiC Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.182ohm SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 750 Stücke: Lieferzeit 14-21 Tag (e) |
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IMDQ75R140M1HXUMA1 | Hersteller : INFINEON |
Description: INFINEON - IMDQ75R140M1HXUMA1 - Siliziumkarbid-MOSFET, n-Kanal, 17 A, 750 V, 0.182 ohm, HDSOP tariffCode: 85412900 Drain-Source-Spannung Vds: 750V rohsCompliant: YES Dauer-Drainstrom Id: 17A hazardous: true rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 5.6V euEccn: NLR Verlustleistung: 100W Bauform - Transistor: HDSOP Anzahl der Pins: 22Pin(s) Produktpalette: CoolSiC Series productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.182ohm SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 750 Stücke: Lieferzeit 14-21 Tag (e) |
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| IMDQ75R140M1HXUMA1 | Hersteller : Infineon Technologies |
IMDQ75R140M1HXUMA1 |
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IMDQ75R140M1HXUMA1 | Hersteller : Infineon Technologies |
Description: SILICON CARBIDE MOSFET Packaging: Tape & Reel (TR) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiC (Silicon Carbide Junction Transistor) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 129mOhm @ 4.7A, 20V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 1.7mA Supplier Device Package: PG-HDSOP-22-1 Drive Voltage (Max Rds On, Min Rds On): 15V, 20V Vgs (Max): +23V, -5V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 351 pF @ 500 V |
Produkt ist nicht verfügbar |