auf Bestellung 750 Stücke:
Lieferzeit 171-175 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 22.72 EUR |
| 10+ | 20.01 EUR |
| 25+ | 19.48 EUR |
| 50+ | 18.39 EUR |
| 100+ | 17.32 EUR |
| 250+ | 16.77 EUR |
| 500+ | 15.7 EUR |
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Technische Details IMDQ75R027M1HXUMA1 Infineon Technologies
Description: IMDQ75R027M1HXUMA1, Packaging: Tape & Reel (TR), Package / Case: 22-PowerBSOP Module, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiC (Silicon Carbide Junction Transistor), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 64A (Tj), Rds On (Max) @ Id, Vgs: 25mOhm @ 24.5A, 20V, Power Dissipation (Max): 273W (Tc), Vgs(th) (Max) @ Id: 5.6V @ 8.8mA, Supplier Device Package: PG-HDSOP-22-1, Drive Voltage (Max Rds On, Min Rds On): 15V, 20V, Vgs (Max): +20V, -2V, Drain to Source Voltage (Vdss): 750 V, Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1668 pF @ 500 V.
Weitere Produktangebote IMDQ75R027M1HXUMA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IMDQ75R027M1HXUMA1 | Hersteller : Infineon Technologies |
 Description: IMDQ75R027M1HXUMA1Packaging: Tape & Reel (TR) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiC (Silicon Carbide Junction Transistor) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 64A (Tj) Rds On (Max) @ Id, Vgs: 25mOhm @ 24.5A, 20V Power Dissipation (Max): 273W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 8.8mA Supplier Device Package: PG-HDSOP-22-1 Drive Voltage (Max Rds On, Min Rds On): 15V, 20V Vgs (Max): +20V, -2V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1668 pF @ 500 V |
Produkt ist nicht verfügbar |
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IMDQ75R027M1HXUMA1 | Hersteller : Infineon Technologies |
Description: IMDQ75R027M1HXUMA1 Packaging: Cut Tape (CT) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiC (Silicon Carbide Junction Transistor) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 64A (Tj) Rds On (Max) @ Id, Vgs: 25mOhm @ 24.5A, 20V Power Dissipation (Max): 273W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 8.8mA Supplier Device Package: PG-HDSOP-22-1 Drive Voltage (Max Rds On, Min Rds On): 15V, 20V Vgs (Max): +20V, -2V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1668 pF @ 500 V |
Produkt ist nicht verfügbar |