IKWH100N65EH7XKSA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 140A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 106 ns
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 100A
Supplier Device Package: PG-TO247-3-32
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 32ns/240ns
Switching Energy: 3.58mJ (on), 2.37mJ (off)
Test Condition: 400V, 100A, 10Ohm, 15V
Gate Charge: 199 nC
Current - Collector (Ic) (Max): 140 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 400 A
Power - Max: 427 W
Description: IGBT TRENCH FS 650V 140A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 106 ns
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 100A
Supplier Device Package: PG-TO247-3-32
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 32ns/240ns
Switching Energy: 3.58mJ (on), 2.37mJ (off)
Test Condition: 400V, 100A, 10Ohm, 15V
Gate Charge: 199 nC
Current - Collector (Ic) (Max): 140 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 400 A
Power - Max: 427 W
auf Bestellung 150 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2+ | 14.82 EUR |
30+ | 11.83 EUR |
120+ | 10.58 EUR |
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Technische Details IKWH100N65EH7XKSA1 Infineon Technologies
Description: IGBT TRENCH FS 650V 140A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 106 ns, Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 100A, Supplier Device Package: PG-TO247-3-32, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 32ns/240ns, Switching Energy: 3.58mJ (on), 2.37mJ (off), Test Condition: 400V, 100A, 10Ohm, 15V, Gate Charge: 199 nC, Current - Collector (Ic) (Max): 140 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 400 A, Power - Max: 427 W.
Weitere Produktangebote IKWH100N65EH7XKSA1 nach Preis ab 8.1 EUR bis 16.02 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||
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IKWH100N65EH7XKSA1 | Hersteller : Infineon Technologies | IGBTs 650 V, 100 A IGBT with anti-parallel diode in TO-247-3 HCC package |
auf Bestellung 491 Stücke: Lieferzeit 10-14 Tag (e) |
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IKWH100N65EH7XKSA1 | Hersteller : INFINEON |
Description: INFINEON - IKWH100N65EH7XKSA1 - IGBT, 140 A, 1.4 V, 427 W, 650 V, TO-247, 3 Pin(s) tariffCode: 85412900 Transistormontage: Durchsteckmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.4V usEccn: EAR99 euEccn: NLR Verlustleistung: 427W Bauform - Transistor: TO-247 Anzahl der Pins: 3Pins Produktpalette: TRENCHSTOP IGBT7 Series Kollektor-Emitter-Spannung, max.: 650V productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 175°C Kontinuierlicher Kollektorstrom: 140A SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 220 Stücke: Lieferzeit 14-21 Tag (e) |
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IKWH100N65EH7XKSA1 | Hersteller : Infineon Technologies | Trans IGBT Chip N-CH 650V 140A 427W |
Produkt ist nicht verfügbar |