IKW50N60DTPXKSA1 INFINEON TECHNOLOGIES
Hersteller: INFINEON TECHNOLOGIESCategory: THT IGBT transistors
Description: Transistor: IGBT; 600V; 61A; 159.6W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 61A
Power dissipation: 159.6W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 249nC
Kind of package: tube
Turn-on time: 50ns
Turn-off time: 233ns
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 182 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 21+ | 3.53 EUR |
| 30+ | 2.45 EUR |
| 31+ | 2.32 EUR |
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Technische Details IKW50N60DTPXKSA1 INFINEON TECHNOLOGIES
Description: IGBT TRENCH FS 600V 80A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 115 ns, Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A, Supplier Device Package: PG-TO247-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 20ns/215ns, Switching Energy: 1.53mJ (on), 850µJ (off), Test Condition: 400V, 50A, 7Ohm, 15V, Gate Charge: 249 nC, Part Status: Not For New Designs, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 150 A, Power - Max: 319.2 W.
Weitere Produktangebote IKW50N60DTPXKSA1 nach Preis ab 2.22 EUR bis 7.52 EUR
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IKW50N60DTPXKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 61A; 159.6W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 600V Collector current: 61A Power dissipation: 159.6W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 150A Mounting: THT Gate charge: 249nC Kind of package: tube Turn-on time: 50ns Turn-off time: 233ns Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
auf Bestellung 182 Stücke: Lieferzeit 7-14 Tag (e) |
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IKW50N60DTPXKSA1 | Hersteller : Infineon Technologies |
IGBTs Y |
auf Bestellung 1046 Stücke: Lieferzeit 10-14 Tag (e) |
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IKW50N60DTPXKSA1 | Hersteller : Infineon Technologies |
Description: IGBT TRENCH FS 600V 80A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 115 ns Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A Supplier Device Package: PG-TO247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 20ns/215ns Switching Energy: 1.53mJ (on), 850µJ (off) Test Condition: 400V, 50A, 7Ohm, 15V Gate Charge: 249 nC Part Status: Not For New Designs Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 150 A Power - Max: 319.2 W |
auf Bestellung 269 Stücke: Lieferzeit 10-14 Tag (e) |
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IKW50N60DTPXKSA1 | Hersteller : Infineon Technologies |
Trans IGBT Chip N-CH 600V 100A 319.2W 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 25 Stücke: Lieferzeit 14-21 Tag (e) |
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IKW50N60DTPXKSA1 | Hersteller : Infineon Technologies |
Trans IGBT Chip N-CH 600V 100A 319.2W 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 25 Stücke: Lieferzeit 14-21 Tag (e) |
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IKW50N60DTPXKSA1 | Hersteller : ROCHESTER ELECTRONICS |
Description: ROCHESTER ELECTRONICS - IKW50N60DTPXKSA1 - IKW50N60 DISCRETE IGBT WITH ANTI-PARALL tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 8 Stücke: Lieferzeit 14-21 Tag (e) |
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IKW50N60DTPXKSA1 | Hersteller : Infineon Technologies |
Trans IGBT Chip N-CH 600V 100A 333000mW 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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IKW50N60DTPXKSA1 | Hersteller : Infineon Technologies |
Trans IGBT Chip N-CH 600V 100A 319.2W 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |