IKFW50N65DH5XKSA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: HOME APPLIANCES 14 PG-HSIP247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 68 ns
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 50A
Supplier Device Package: PG-HSIP247-3-2
IGBT Type: Trench
Td (on/off) @ 25°C: 23ns/131ns
Switching Energy: 1.46mJ (on), 630µJ (off)
Test Condition: 400V, 50A, 12.2Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 59 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 124 W
Description: HOME APPLIANCES 14 PG-HSIP247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 68 ns
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 50A
Supplier Device Package: PG-HSIP247-3-2
IGBT Type: Trench
Td (on/off) @ 25°C: 23ns/131ns
Switching Energy: 1.46mJ (on), 630µJ (off)
Test Condition: 400V, 50A, 12.2Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 59 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 124 W
auf Bestellung 240 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2+ | 12.76 EUR |
10+ | 9.1 EUR |
240+ | 6.67 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IKFW50N65DH5XKSA1 Infineon Technologies
Description: HOME APPLIANCES 14 PG-HSIP247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 68 ns, Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 50A, Supplier Device Package: PG-HSIP247-3-2, IGBT Type: Trench, Td (on/off) @ 25°C: 23ns/131ns, Switching Energy: 1.46mJ (on), 630µJ (off), Test Condition: 400V, 50A, 12.2Ohm, 15V, Gate Charge: 95 nC, Part Status: Active, Current - Collector (Ic) (Max): 59 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 160 A, Power - Max: 124 W.
Weitere Produktangebote IKFW50N65DH5XKSA1
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
IKFW50N65DH5XKSA1 | Hersteller : Infineon |
auf Bestellung 240 Stücke: Lieferzeit 21-28 Tag (e) |
|||
IKFW50N65DH5XKSA1 | Hersteller : Infineon Technologies | High speed 5 IGBT in Trench Stop |
Produkt ist nicht verfügbar |
||
IKFW50N65DH5XKSA1 | Hersteller : Infineon Technologies | High speed 5 IGBT in Trench Stop |
Produkt ist nicht verfügbar |
||
IKFW50N65DH5XKSA1 | Hersteller : Infineon Technologies | IGBT Transistors HOME APPLIANCES 14 |
Produkt ist nicht verfügbar |