IKD15N60R

IKD15N60R Infineon Technologies


IK%28D%2CU%2915N60R.pdf Hersteller: Infineon Technologies
Description: IGBT TRENCH 600V 30A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 110 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: PG-TO252-3-11
IGBT Type: Trench
Td (on/off) @ 25°C: 16ns/183ns
Switching Energy: 900µJ
Test Condition: 400V, 15A, 15Ohm, 15V
Gate Charge: 90 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 250 W
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Technische Details IKD15N60R Infineon Technologies

Description: IGBT TRENCH 600V 30A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 110 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A, Supplier Device Package: PG-TO252-3-11, IGBT Type: Trench, Td (on/off) @ 25°C: 16ns/183ns, Switching Energy: 900µJ, Test Condition: 400V, 15A, 15Ohm, 15V, Gate Charge: 90 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 30 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 45 A, Power - Max: 250 W.

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IKD15N60R IKD15N60R Hersteller : Infineon Technologies Infineon_IKD15N60R_DS_v02_04_EN-3163765.pdf IGBT Transistors IGBT PRODUCTS
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