IKB40N65ES5ATMA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 79A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 73 ns
Vce(on) (Max) @ Vge, Ic: 1.74V @ 15V, 40A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 19ns/130ns
Switching Energy: 860µJ (on), 400µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 79 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 230 W
Description: IGBT TRENCH FS 650V 79A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 73 ns
Vce(on) (Max) @ Vge, Ic: 1.74V @ 15V, 40A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 19ns/130ns
Switching Energy: 860µJ (on), 400µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 79 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 230 W
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1000+ | 3.1 EUR |
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Technische Details IKB40N65ES5ATMA1 Infineon Technologies
Description: IGBT TRENCH FS 650V 79A TO263-3, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 73 ns, Vce(on) (Max) @ Vge, Ic: 1.74V @ 15V, 40A, Supplier Device Package: PG-TO263-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 19ns/130ns, Switching Energy: 860µJ (on), 400µJ (off), Test Condition: 400V, 40A, 10Ohm, 15V, Gate Charge: 95 nC, Part Status: Active, Current - Collector (Ic) (Max): 79 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 160 A, Power - Max: 230 W.
Weitere Produktangebote IKB40N65ES5ATMA1 nach Preis ab 2.5 EUR bis 7.93 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
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IKB40N65ES5ATMA1 | Hersteller : Infineon Technologies | Trans IGBT Chip N-CH 650V 79A 230W 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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IKB40N65ES5ATMA1 | Hersteller : Infineon Technologies | Trans IGBT Chip N-CH 650V 79A 230W 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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IKB40N65ES5ATMA1 | Hersteller : Infineon Technologies | Trans IGBT Chip N-CH 650V 79A 230W 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
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IKB40N65ES5ATMA1 | Hersteller : Infineon Technologies | Trans IGBT Chip N-CH 650V 79A 230W 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 1775 Stücke: Lieferzeit 14-21 Tag (e) |
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IKB40N65ES5ATMA1 | Hersteller : Infineon Technologies | Trans IGBT Chip N-CH 650V 79A 230W 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 1775 Stücke: Lieferzeit 14-21 Tag (e) |
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IKB40N65ES5ATMA1 | Hersteller : Infineon Technologies | IGBTs INDUSTRY 14 |
auf Bestellung 7301 Stücke: Lieferzeit 10-14 Tag (e) |
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IKB40N65ES5ATMA1 | Hersteller : Infineon Technologies |
Description: IGBT TRENCH FS 650V 79A TO263-3 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 73 ns Vce(on) (Max) @ Vge, Ic: 1.74V @ 15V, 40A Supplier Device Package: PG-TO263-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 19ns/130ns Switching Energy: 860µJ (on), 400µJ (off) Test Condition: 400V, 40A, 10Ohm, 15V Gate Charge: 95 nC Part Status: Active Current - Collector (Ic) (Max): 79 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 160 A Power - Max: 230 W |
auf Bestellung 8628 Stücke: Lieferzeit 10-14 Tag (e) |
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IKB40N65ES5ATMA1 | Hersteller : Infineon Technologies | Trans IGBT Chip N-CH 650V 79A 230W 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 904 Stücke: Lieferzeit 14-21 Tag (e) |
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IKB40N65ES5ATMA1 | Hersteller : INFINEON |
Description: INFINEON - IKB40N65ES5ATMA1 - IGBT, 79 A, 1.35 V, 230 W, 650 V, TO-263 (D2PAK), 3 Pin(s) tariffCode: 85412900 Transistormontage: Oberflächenmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.35V MSL: - usEccn: EAR99 euEccn: NLR Verlustleistung: 230W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: TRENCHSTOP 5 Kollektor-Emitter-Spannung, max.: 650V productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 175°C Kontinuierlicher Kollektorstrom: 79A SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 517 Stücke: Lieferzeit 14-21 Tag (e) |
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IKB40N65ES5ATMA1 | Hersteller : INFINEON |
Description: INFINEON - IKB40N65ES5ATMA1 - IGBT, 79 A, 1.35 V, 230 W, 650 V, TO-263 (D2PAK), 3 Pin(s) tariffCode: 85412900 Transistormontage: Oberflächenmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.35V MSL: - usEccn: EAR99 euEccn: NLR Verlustleistung: 230W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: TRENCHSTOP 5 Kollektor-Emitter-Spannung, max.: 650V productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 175°C Kontinuierlicher Kollektorstrom: 79A SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 517 Stücke: Lieferzeit 14-21 Tag (e) |
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IKB40N65ES5ATMA1 | Hersteller : Infineon Technologies | Trans IGBT Chip N-CH 650V 79A 230000mW 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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IKB40N65ES5ATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 50A; 115W; D2PAK Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 115W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 160A Mounting: SMD Gate charge: 95nC Kind of package: reel; tape Turn-on time: 37ns Turn-off time: 153ns Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IKB40N65ES5ATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 50A; 115W; D2PAK Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 115W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 160A Mounting: SMD Gate charge: 95nC Kind of package: reel; tape Turn-on time: 37ns Turn-off time: 153ns Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |