IKB15N60TATMA1 INFINEON TECHNOLOGIES
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 23A; 130W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 23A
Power dissipation: 130W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Mounting: SMD
Gate charge: 87nC
Kind of package: reel; tape
Turn-on time: 28ns
Turn-off time: 238ns
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 23A; 130W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 23A
Power dissipation: 130W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Mounting: SMD
Gate charge: 87nC
Kind of package: reel; tape
Turn-on time: 28ns
Turn-off time: 238ns
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 845 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
20+ | 3.66 EUR |
22+ | 3.29 EUR |
28+ | 2.6 EUR |
30+ | 2.46 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IKB15N60TATMA1 INFINEON TECHNOLOGIES
Description: IGBT TRENCH FS 600V 30A TO263-3, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 34 ns, Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 15A, Supplier Device Package: PG-TO263-3-2, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 17ns/188ns, Switching Energy: 570µJ, Test Condition: 400V, 15A, 15Ohm, 15V, Gate Charge: 87 nC, Part Status: Active, Current - Collector (Ic) (Max): 30 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 45 A, Power - Max: 130 W.
Weitere Produktangebote IKB15N60TATMA1 nach Preis ab 1.81 EUR bis 4.96 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IKB15N60TATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 23A; 130W; D2PAK Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 600V Collector current: 23A Power dissipation: 130W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 45A Mounting: SMD Gate charge: 87nC Kind of package: reel; tape Turn-on time: 28ns Turn-off time: 238ns Features of semiconductor devices: integrated anti-parallel diode |
auf Bestellung 845 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||
IKB15N60TATMA1 | Hersteller : Infineon Technologies |
Description: IGBT TRENCH FS 600V 30A TO263-3 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 34 ns Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 15A Supplier Device Package: PG-TO263-3-2 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 17ns/188ns Switching Energy: 570µJ Test Condition: 400V, 15A, 15Ohm, 15V Gate Charge: 87 nC Part Status: Active Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 45 A Power - Max: 130 W |
auf Bestellung 559 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||
IKB15N60TATMA1 | Hersteller : Infineon Technologies |
Description: IGBT TRENCH FS 600V 30A TO263-3 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 34 ns Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 15A Supplier Device Package: PG-TO263-3-2 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 17ns/188ns Switching Energy: 570µJ Test Condition: 400V, 15A, 15Ohm, 15V Gate Charge: 87 nC Part Status: Active Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 45 A Power - Max: 130 W |
auf Bestellung 558 Stücke: Lieferzeit 10-14 Tag (e) |
||||||||||||
IKB15N60TATMA1 | Hersteller : Infineon Technologies | Trans IGBT Chip N-CH 600V 26A 130000mW Automotive 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
||||||||||||
IKB15N60TATMA1 | Hersteller : Infineon Technologies | Trans IGBT Chip N-CH 600V 26A 130W Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
||||||||||||
IKB15N60TATMA1 | Hersteller : Infineon Technologies | Trans IGBT Chip N-CH 600V 26A 130W Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
||||||||||||
IKB15N60TATMA1 | Hersteller : Infineon Technologies | IGBT Transistors INDUSTRY 14 |
Produkt ist nicht verfügbar |