IHW40N65R6XKSA1 Infineon Technologies
Hersteller: Infineon Technologies
IGBTs 650 V, 40 A IGBT with monolithically integrated diode in TO-247 package
IGBTs 650 V, 40 A IGBT with monolithically integrated diode in TO-247 package
auf Bestellung 163 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 5.65 EUR |
10+ | 5.24 EUR |
25+ | 3.73 EUR |
100+ | 3.06 EUR |
240+ | 3.04 EUR |
480+ | 2.38 EUR |
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Technische Details IHW40N65R6XKSA1 Infineon Technologies
Description: IGBT 650V 83A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 99 ns, Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 40A, Supplier Device Package: PG-TO247-3, Td (on/off) @ 25°C: 17ns/211ns, Switching Energy: 1.1mJ (on), 420µJ (off), Test Condition: 400V, 40A, 10Ohm, 15V, Gate Charge: 159 nC, Part Status: Active, Current - Collector (Ic) (Max): 83 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 210 W.
Weitere Produktangebote IHW40N65R6XKSA1 nach Preis ab 2.63 EUR bis 23.84 EUR
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IHW40N65R6XKSA1 | Hersteller : Infineon Technologies |
Description: IGBT 650V 83A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 99 ns Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 40A Supplier Device Package: PG-TO247-3 Td (on/off) @ 25°C: 17ns/211ns Switching Energy: 1.1mJ (on), 420µJ (off) Test Condition: 400V, 40A, 10Ohm, 15V Gate Charge: 159 nC Part Status: Active Current - Collector (Ic) (Max): 83 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 210 W |
auf Bestellung 162 Stücke: Lieferzeit 10-14 Tag (e) |
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IHW40N65R6XKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 54A; 105W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 54A Power dissipation: 105W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 159nC Kind of package: tube Turn-on time: 36ns Turn-off time: 256ns Features of semiconductor devices: reverse conducting IGBT (RC-IGBT) Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3 Stücke: Lieferzeit 7-14 Tag (e) |
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IHW40N65R6XKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 54A; 105W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 54A Power dissipation: 105W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 159nC Kind of package: tube Turn-on time: 36ns Turn-off time: 256ns Features of semiconductor devices: reverse conducting IGBT (RC-IGBT) |
auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
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IHW40N65R6XKSA1 | Hersteller : INFINEON |
Description: INFINEON - IHW40N65R6XKSA1 - IGBT, 83 A, 1.29 V, 210 W, 650 V, TO-247, 3 Pin(s) tariffCode: 85412900 Transistormontage: Durchsteckmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.29V usEccn: EAR99 euEccn: NLR Verlustleistung: 210W Bauform - Transistor: TO-247 Anzahl der Pins: 3Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 650V productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 175°C Kontinuierlicher Kollektorstrom: 83A SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 43 Stücke: Lieferzeit 14-21 Tag (e) |
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IHW40N65R6XKSA1 | Hersteller : Infineon Technologies | SP005399488 |
Produkt ist nicht verfügbar |
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IHW40N65R6XKSA1 | Hersteller : Infineon Technologies | IGBT with Monolithic Integrated Diode |
Produkt ist nicht verfügbar |