IHW30N65R6XKSA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: IGBT 650V 65A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 90 ns
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 30A
Supplier Device Package: PG-TO247-3
Td (on/off) @ 25°C: 13ns/161ns
Switching Energy: 730µJ (on), 260µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 120 nC
Current - Collector (Ic) (Max): 65 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 163 W
Description: IGBT 650V 65A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 90 ns
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 30A
Supplier Device Package: PG-TO247-3
Td (on/off) @ 25°C: 13ns/161ns
Switching Energy: 730µJ (on), 260µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 120 nC
Current - Collector (Ic) (Max): 65 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 163 W
auf Bestellung 234 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
5+ | 4.38 EUR |
30+ | 3.47 EUR |
120+ | 2.98 EUR |
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Technische Details IHW30N65R6XKSA1 Infineon Technologies
Description: IGBT 650V 65A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 90 ns, Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 30A, Supplier Device Package: PG-TO247-3, Td (on/off) @ 25°C: 13ns/161ns, Switching Energy: 730µJ (on), 260µJ (off), Test Condition: 400V, 30A, 10Ohm, 15V, Gate Charge: 120 nC, Current - Collector (Ic) (Max): 65 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 90 A, Power - Max: 163 W.
Weitere Produktangebote IHW30N65R6XKSA1 nach Preis ab 2.15 EUR bis 4.44 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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IHW30N65R6XKSA1 | Hersteller : Infineon Technologies | IGBTs 650 V, 30 A IGBT with monolithically integrated diode in TO-247 package |
auf Bestellung 470 Stücke: Lieferzeit 10-14 Tag (e) |
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IHW30N65R6XKSA1 | Hersteller : INFINEON |
Description: INFINEON - IHW30N65R6XKSA1 - IGBT, 65 A, 1.26 V, 163 W, 650 V, TO-247, 3 Pin(s) tariffCode: 85412900 Transistormontage: Durchsteckmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.26V usEccn: EAR99 euEccn: NLR Verlustleistung: 163W Bauform - Transistor: TO-247 Anzahl der Pins: 3Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 650V productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 175°C Kontinuierlicher Kollektorstrom: 65A SVHC: No SVHC (17-Jan-2023) |
auf Bestellung 855 Stücke: Lieferzeit 14-21 Tag (e) |
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IHW30N65R6XKSA1 | Hersteller : Infineon Technologies | SP005399486 |
Produkt ist nicht verfügbar |
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IHW30N65R6XKSA1 | Hersteller : Infineon Technologies | Reverse-Conducting IGBT with Monolithic Body Diode |
Produkt ist nicht verfügbar |