IHW30N160R2FKSA1 Infineon Technologies
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Technische Details IHW30N160R2FKSA1 Infineon Technologies
Description: IGBT 1600V 60A 312W TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A, Supplier Device Package: PG-TO247-3-1, IGBT Type: NPT, Trench Field Stop, Td (on/off) @ 25°C: -/525ns, Switching Energy: 4.37mJ, Test Condition: 600V, 30A, 10Ohm, 15V, Gate Charge: 94 nC, Current - Collector (Ic) (Max): 60 A, Voltage - Collector Emitter Breakdown (Max): 1600 V, Current - Collector Pulsed (Icm): 90 A, Power - Max: 312 W.
Weitere Produktangebote IHW30N160R2FKSA1
Foto | Bezeichnung | Hersteller | Beschreibung |
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IHW30N160R2FKSA1 | Hersteller : Infineon Technologies |
Description: IGBT 1600V 60A 312W TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A Supplier Device Package: PG-TO247-3-1 IGBT Type: NPT, Trench Field Stop Td (on/off) @ 25°C: -/525ns Switching Energy: 4.37mJ Test Condition: 600V, 30A, 10Ohm, 15V Gate Charge: 94 nC Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 1600 V Current - Collector Pulsed (Icm): 90 A Power - Max: 312 W |
Produkt ist nicht verfügbar |
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IHW30N160R2FKSA1 | Hersteller : Infineon Technologies | IGBTs RC-IGBT MONO DIODE 1600V 30A |
Produkt ist nicht verfügbar |