IGZ100N65H5XKSA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: IGBT TRENCH 650V 161A TO247-4
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
Supplier Device Package: PG-TO247-4
IGBT Type: Trench
Td (on/off) @ 25°C: 30ns/421ns
Switching Energy: 850µJ (on), 770µJ (off)
Test Condition: 400V, 50A, 8Ohm, 15V
Gate Charge: 210 nC
Part Status: Active
Current - Collector (Ic) (Max): 161 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 400 A
Power - Max: 536 W
Description: IGBT TRENCH 650V 161A TO247-4
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
Supplier Device Package: PG-TO247-4
IGBT Type: Trench
Td (on/off) @ 25°C: 30ns/421ns
Switching Energy: 850µJ (on), 770µJ (off)
Test Condition: 400V, 50A, 8Ohm, 15V
Gate Charge: 210 nC
Part Status: Active
Current - Collector (Ic) (Max): 161 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 400 A
Power - Max: 536 W
auf Bestellung 1718 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
71+ | 6.96 EUR |
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Technische Details IGZ100N65H5XKSA1 Infineon Technologies
Description: INFINEON - IGZ100N65H5XKSA1 - IGBT, 161 A, 1.65 V, 536 W, 650 V, TO-247, 4 Pin(s), tariffCode: 85412900, Transistormontage: Durchsteckmontage, rohsCompliant: YES, hazardous: false, rohsPhthalatesCompliant: YES, Kollektor-Emitter-Sättigungsspannung: 1.65V, MSL: -, usEccn: EAR99, euEccn: NLR, Verlustleistung: 536W, Bauform - Transistor: TO-247, Anzahl der Pins: 4Pin(s), Produktpalette: TRENCHSTOPTM 5, Kollektor-Emitter-Spannung, max.: 650V, productTraceability: Yes-Date/Lot Code, Betriebstemperatur, max.: 175°C, Kontinuierlicher Kollektorstrom: 161A, SVHC: No SVHC (27-Jun-2018).
Weitere Produktangebote IGZ100N65H5XKSA1 nach Preis ab 6.32 EUR bis 7.57 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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Preis ohne MwSt | ||||||||||||||
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IGZ100N65H5XKSA1 | Hersteller : Infineon Technologies | IGBTs IGBT PRODUCTS |
auf Bestellung 513 Stücke: Lieferzeit 10-14 Tag (e) |
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IGZ100N65H5XKSA1 | Hersteller : INFINEON |
Description: INFINEON - IGZ100N65H5XKSA1 - IGBT, 161 A, 1.65 V, 536 W, 650 V, TO-247, 4 Pin(s) tariffCode: 85412900 Transistormontage: Durchsteckmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.65V MSL: - usEccn: EAR99 euEccn: NLR Verlustleistung: 536W Bauform - Transistor: TO-247 Anzahl der Pins: 4Pin(s) Produktpalette: TRENCHSTOPTM 5 Kollektor-Emitter-Spannung, max.: 650V productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 175°C Kontinuierlicher Kollektorstrom: 161A SVHC: No SVHC (27-Jun-2018) |
auf Bestellung 240 Stücke: Lieferzeit 14-21 Tag (e) |
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IGZ100N65H5XKSA1 | Hersteller : Infineon Technologies | Trans IGBT Chip N-CH 650V 161A 536000mW 4-Pin(4+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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IGZ100N65H5XKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 101A; 268W; TO247-4; H5 Manufacturer series: H5 Gate-emitter voltage: ±20V Collector current: 101A Pulsed collector current: 400A Turn-on time: 40ns Turn-off time: 485ns Type of transistor: IGBT Power dissipation: 268W Kind of package: tube Gate charge: 0.21µC Technology: TRENCHSTOP™ 5 Mounting: THT Case: TO247-4 Collector-emitter voltage: 650V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IGZ100N65H5XKSA1 | Hersteller : Infineon Technologies |
Description: IGBT TRENCH 650V 161A TO247-4 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A Supplier Device Package: PG-TO247-4 IGBT Type: Trench Td (on/off) @ 25°C: 30ns/421ns Switching Energy: 850µJ (on), 770µJ (off) Test Condition: 400V, 50A, 8Ohm, 15V Gate Charge: 210 nC Part Status: Active Current - Collector (Ic) (Max): 161 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 400 A Power - Max: 536 W |
Produkt ist nicht verfügbar |
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IGZ100N65H5XKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 101A; 268W; TO247-4; H5 Manufacturer series: H5 Gate-emitter voltage: ±20V Collector current: 101A Pulsed collector current: 400A Turn-on time: 40ns Turn-off time: 485ns Type of transistor: IGBT Power dissipation: 268W Kind of package: tube Gate charge: 0.21µC Technology: TRENCHSTOP™ 5 Mounting: THT Case: TO247-4 Collector-emitter voltage: 650V |
Produkt ist nicht verfügbar |