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IGW50N65F5AXKSA1

IGW50N65F5AXKSA1 Infineon Technologies


IGW50N65F5A.pdf Hersteller: Infineon Technologies
Description: IGBT 650V TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 21ns/156ns
Switching Energy: 490µJ (on), 140µJ (off)
Test Condition: 400V, 25A, 12Ohm, 15V
Gate Charge: 108 nC
Grade: Automotive
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 270 W
Qualification: AEC-Q101
auf Bestellung 2773 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
89+5.45 EUR
Mindestbestellmenge: 89
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Technische Details IGW50N65F5AXKSA1 Infineon Technologies

Description: IGBT 650V TO247-3, Packaging: Bulk, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A, Supplier Device Package: PG-TO247-3, IGBT Type: Trench, Td (on/off) @ 25°C: 21ns/156ns, Switching Energy: 490µJ (on), 140µJ (off), Test Condition: 400V, 25A, 12Ohm, 15V, Gate Charge: 108 nC, Grade: Automotive, Part Status: Obsolete, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 150 A, Power - Max: 270 W, Qualification: AEC-Q101.

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IGW50N65F5AXKSA1 IGW50N65F5AXKSA1 Hersteller : Infineon Technologies Infineon-IGW50N65F5-DS-v02_01-EN-1225958.pdf IGBT Transistors DISCRETE SWITCHES
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IGW50N65F5AXKSA1 Hersteller : ROCHESTER ELECTRONICS IGW50N65F5A.pdf Description: ROCHESTER ELECTRONICS - IGW50N65F5AXKSA1 - IGW50N65 - AUTOMOTIVE IGBT DISCRETES
tariffCode: 85412900
euEccn: TBC
hazardous: false
productTraceability: No
usEccn: TBC
SVHC: No SVHC (27-Jun-2024)
auf Bestellung 2773 Stücke:
Lieferzeit 14-21 Tag (e)
IGW50N65F5AXKSA1 IGW50N65F5AXKSA1 Hersteller : Infineon Technologies 8014infineon-igw50n65f5a-ds-v02_01-en.pdffileid5546d4624b0b249c014b79.pdf Trans IGBT Chip N-CH 650V 80A 270000mW Automotive 3-Pin(3+Tab) TO-247 Tube
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IGW50N65F5AXKSA1 IGW50N65F5AXKSA1 Hersteller : Infineon Technologies IGW50N65F5A.pdf Description: IGBT 650V TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 21ns/156ns
Switching Energy: 490µJ (on), 140µJ (off)
Test Condition: 400V, 25A, 12Ohm, 15V
Gate Charge: 108 nC
Grade: Automotive
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 270 W
Qualification: AEC-Q101
Produkt ist nicht verfügbar