IGT60R070D1ATMA4 Infineon Technologies
Hersteller: Infineon Technologies
Description: GANFET N-CH
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-HSOF-8-3
Part Status: Active
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V
Description: GANFET N-CH
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-HSOF-8-3
Part Status: Active
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2000+ | 10.94 EUR |
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Technische Details IGT60R070D1ATMA4 Infineon Technologies
Description: GANFET N-CH, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 31A (Tc), Power Dissipation (Max): 125W (Tc), Vgs(th) (Max) @ Id: 1.6V @ 2.6mA, Supplier Device Package: PG-HSOF-8-3, Part Status: Active, Vgs (Max): -10V, Drain to Source Voltage (Vdss): 600 V, Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V.
Weitere Produktangebote IGT60R070D1ATMA4 nach Preis ab 10.94 EUR bis 35.65 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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IGT60R070D1ATMA4 | Hersteller : Infineon Technologies | MOSFETs N |
auf Bestellung 2645 Stücke: Lieferzeit 10-14 Tag (e) |
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IGT60R070D1ATMA4 | Hersteller : Infineon Technologies |
Description: GANFET N-CH Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 2.6mA Supplier Device Package: PG-HSOF-8-3 Part Status: Active Vgs (Max): -10V Drain to Source Voltage (Vdss): 600 V Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V |
auf Bestellung 2702 Stücke: Lieferzeit 10-14 Tag (e) |
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IGT60R070D1ATMA4 | Hersteller : Infineon Technologies | Trans JFET N-CH 600V 31A GaN 9-Pin(8+Tab) HSOF T/R |
auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
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IGT60R070D1ATMA4 | Hersteller : Infineon Technologies | Trans JFET N-CH 600V 31A GaN 9-Pin(8+Tab) HSOF T/R |
auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
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IGT60R070D1ATMA4 | Hersteller : Infineon Technologies | 600V Enhancement Mode Power Transistor |
Produkt ist nicht verfügbar |
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IGT60R070D1ATMA4 | Hersteller : Infineon Technologies | Trans JFET N-CH 600V 31A GaN 9-Pin(8+Tab) HSOF T/R |
Produkt ist nicht verfügbar |