IGOT60R070D1AUMA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: GANFET N-CH 600V 31A 20DSO
Packaging: Bulk
Package / Case: 20-PowerSOIC (0.433", 11.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-DSO-20-87
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V
Description: GANFET N-CH 600V 31A 20DSO
Packaging: Bulk
Package / Case: 20-PowerSOIC (0.433", 11.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-DSO-20-87
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V
auf Bestellung 28 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
18+ | 27.51 EUR |
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Technische Details IGOT60R070D1AUMA1 Infineon Technologies
Description: INFINEON - IGOT60R070D1AUMA1 - Galliumnitrid (GaN)-Transistor, 600 V, 31 A, 0.07 ohm, 5.8 nC, SOIC, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 600V, rohsCompliant: YES, Dauer-Drainstrom Id: 31A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, Durchgangswiderstand, Rds(on), max.: 0.07ohm, usEccn: EAR99, euEccn: NLR, Gate-Ladung, typ.: 5.8nC, Bauform - Transistor: SOIC, Anzahl der Pins: 20Pins, Produktpalette: CoolGaN, productTraceability: No, Drain-Source-Durchgangswiderstand: 0.07ohm, SVHC: No SVHC (27-Jun-2018).
Weitere Produktangebote IGOT60R070D1AUMA1
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
IGOT60R070D1AUMA1 | Hersteller : INFINEON |
Description: INFINEON - IGOT60R070D1AUMA1 - Galliumnitrid (GaN)-Transistor, 600 V, 31 A, 0.07 ohm, 5.8 nC, SOIC, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 600V rohsCompliant: YES Dauer-Drainstrom Id: 31A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 euEccn: NLR Gate-Ladung, typ.: 5.8nC Bauform - Transistor: SOIC Anzahl der Pins: 20Pins Produktpalette: CoolGaN productTraceability: No Drain-Source-Durchgangswiderstand: 0.07ohm SVHC: No SVHC (27-Jun-2018) |
auf Bestellung 78 Stücke: Lieferzeit 14-21 Tag (e) |
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IGOT60R070D1AUMA1 | Hersteller : Infineon Technologies | MOSFET GAN HV |
auf Bestellung 789 Stücke: Lieferzeit 10-14 Tag (e) |
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IGOT60R070D1AUMA1 | Hersteller : INFINEON |
Description: INFINEON - IGOT60R070D1AUMA1 - Galliumnitrid (GaN)-Transistor, 600 V, 31 A, 0.07 ohm, 5.8 nC, SOIC, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 600V rohsCompliant: YES Dauer-Drainstrom Id: 31A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Durchgangswiderstand, Rds(on), max.: 0.07ohm usEccn: EAR99 euEccn: NLR Gate-Ladung, typ.: 5.8nC Bauform - Transistor: SOIC Anzahl der Pins: 20Pins Produktpalette: CoolGaN productTraceability: No Drain-Source-Durchgangswiderstand: 0.07ohm SVHC: No SVHC (27-Jun-2018) |
auf Bestellung 78 Stücke: Lieferzeit 14-21 Tag (e) |
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IGOT60R070D1AUMA1 | Hersteller : ROCHESTER ELECTRONICS |
Description: ROCHESTER ELECTRONICS - IGOT60R070D1AUMA1 - GAN HV tariffCode: 85423190 productTraceability: No rohsCompliant: YES euEccn: TBC hazardous: false rohsPhthalatesCompliant: TBA usEccn: TBC SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 28 Stücke: Lieferzeit 14-21 Tag (e) |
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IGOT60R070D1AUMA1 | Hersteller : Infineon Technologies | Trans JFET N-CH 600V 31A GaN 20-Pin DSO EP T/R |
Produkt ist nicht verfügbar |
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IGOT60R070D1AUMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-JFET; CoolGaN™; unipolar; HEMT; 600V; 31A; Idm: 60A Type of transistor: N-JFET Technology: CoolGaN™ Polarisation: unipolar Kind of transistor: HEMT Drain-source voltage: 600V Drain current: 31A Pulsed drain current: 60A Power dissipation: 125W Case: PG-DSO-20 Gate-source voltage: -10V On-state resistance: 70mΩ Mounting: SMD Gate charge: 5.8nC Kind of package: tape Kind of channel: enhanced Gate current: 20mA Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IGOT60R070D1AUMA1 | Hersteller : Infineon Technologies |
Description: GANFET N-CH 600V 31A 20DSO Packaging: Tape & Reel (TR) Package / Case: 20-PowerSOIC (0.433", 11.00mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 2.6mA Supplier Device Package: PG-DSO-20-87 Vgs (Max): -10V Drain to Source Voltage (Vdss): 600 V Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V |
Produkt ist nicht verfügbar |
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IGOT60R070D1AUMA1 | Hersteller : Infineon Technologies |
Description: GANFET N-CH 600V 31A 20DSO Packaging: Cut Tape (CT) Package / Case: 20-PowerSOIC (0.433", 11.00mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 2.6mA Supplier Device Package: PG-DSO-20-87 Vgs (Max): -10V Drain to Source Voltage (Vdss): 600 V Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V |
Produkt ist nicht verfügbar |
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IGOT60R070D1AUMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-JFET; CoolGaN™; unipolar; HEMT; 600V; 31A; Idm: 60A Type of transistor: N-JFET Technology: CoolGaN™ Polarisation: unipolar Kind of transistor: HEMT Drain-source voltage: 600V Drain current: 31A Pulsed drain current: 60A Power dissipation: 125W Case: PG-DSO-20 Gate-source voltage: -10V On-state resistance: 70mΩ Mounting: SMD Gate charge: 5.8nC Kind of package: tape Kind of channel: enhanced Gate current: 20mA |
Produkt ist nicht verfügbar |