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IFF600B12ME4PB11BPSA1

IFF600B12ME4PB11BPSA1 Infineon Technologies


Infineon_IFF600B12ME4P_B11_DataSheet_v01_10_JA-3163585.pdf Hersteller: Infineon Technologies
IGBT Modules 1200 V, 600 A dual IGBT module
auf Bestellung 27 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+349.47 EUR
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Technische Details IFF600B12ME4PB11BPSA1 Infineon Technologies

Description: IGBT MOD 1200V 600A 40W, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Half Bridge, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A, NTC Thermistor: Yes, Supplier Device Package: Module, IGBT Type: Trench Field Stop, Part Status: Active, Current - Collector (Ic) (Max): 600 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 40 W, Current - Collector Cutoff (Max): 3 mA, Input Capacitance (Cies) @ Vce: 37 nF @ 25 V.

Weitere Produktangebote IFF600B12ME4PB11BPSA1 nach Preis ab 547.11 EUR bis 547.11 EUR

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IFF600B12ME4PB11BPSA1 IFF600B12ME4PB11BPSA1 Hersteller : Infineon Technologies Infineon-IFF600B12ME4P_B11-DS-v03_01-EN.pdf?fileId=5546d462602a9dc801602ab2bc49001e Description: IGBT MOD 1200V 600A 40W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 40 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+547.11 EUR
IFF600B12ME4PB11BPSA1 Hersteller : INFINEON TECHNOLOGIES IFF600B12ME4PB11.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A
Application: for UPS; Inverter; motors; photovoltaics
Pulsed collector current: 1.2kA
Collector current: 600A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Type of module: IGBT
Case: AG-ECONOD-6
Technology: EconoDUAL™ 3
Topology: IGBT half-bridge; NTC thermistor
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IFF600B12ME4PB11BPSA1 Hersteller : INFINEON TECHNOLOGIES IFF600B12ME4PB11.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A
Application: for UPS; Inverter; motors; photovoltaics
Pulsed collector current: 1.2kA
Collector current: 600A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Type of module: IGBT
Case: AG-ECONOD-6
Technology: EconoDUAL™ 3
Topology: IGBT half-bridge; NTC thermistor
Produkt ist nicht verfügbar