IF170BST3 InterFET
Hersteller: InterFET
Description: JFET N-Channel -30V Low Noise
Packaging: Strip
Package / Case: SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 10V
Supplier Device Package: SOT-23-3
Part Status: Active
Drain to Source Voltage (Vdss): 30 V
Power - Max: 350 mW
Resistance - RDS(On): 50 Ohms
Voltage - Cutoff (VGS off) @ Id: 800 mV @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 7 mA @ 10 V
Description: JFET N-Channel -30V Low Noise
Packaging: Strip
Package / Case: SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 10V
Supplier Device Package: SOT-23-3
Part Status: Active
Drain to Source Voltage (Vdss): 30 V
Power - Max: 350 mW
Resistance - RDS(On): 50 Ohms
Voltage - Cutoff (VGS off) @ Id: 800 mV @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 7 mA @ 10 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
20+ | 4.51 EUR |
500+ | 2.85 EUR |
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Technische Details IF170BST3 InterFET
Description: JFET N-Channel -30V Low Noise, Packaging: Strip, Package / Case: SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), FET Type: N-Channel, Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 10V, Supplier Device Package: SOT-23-3, Part Status: Active, Drain to Source Voltage (Vdss): 30 V, Power - Max: 350 mW, Resistance - RDS(On): 50 Ohms, Voltage - Cutoff (VGS off) @ Id: 800 mV @ 1 nA, Current - Drain (Idss) @ Vds (Vgs=0): 7 mA @ 10 V.
Weitere Produktangebote IF170BST3
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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IF170BST3 | Hersteller : InterFET | JFET JFET N-Channel -30V Low Noise |
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