IDWD10G200C5XKSA1 Infineon Technologies
auf Bestellung 240 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 19.59 EUR |
| 10+ | 15.82 EUR |
| 25+ | 14.73 EUR |
| 50+ | 14.10 EUR |
| 100+ | 13.52 EUR |
| 240+ | 12.81 EUR |
| 480+ | 12.23 EUR |
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Technische Details IDWD10G200C5XKSA1 Infineon Technologies
Description: SIC DISCRETE, Packaging: Tube, Package / Case: TO-247-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 1140pF @ 1V, 100kHz, Current - Average Rectified (Io): 35A, Supplier Device Package: PG-TO247-2-U01, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 2000 V, Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A, Current - Reverse Leakage @ Vr: 150 µA @ 2 kV.
Weitere Produktangebote IDWD10G200C5XKSA1 nach Preis ab 13.24 EUR bis 20.50 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| IDWD10G200C5XKSA1 | Hersteller : Infineon Technologies |
 Description: SIC DISCRETEPackaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1140pF @ 1V, 100kHz Current - Average Rectified (Io): 35A Supplier Device Package: PG-TO247-2-U01 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 2000 V Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A Current - Reverse Leakage @ Vr: 150 µA @ 2 kV |
auf Bestellung 240 Stücke: Lieferzeit 10-14 Tag (e) |
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