IDW15E65D2 Infineon Technologies
Hersteller: Infineon Technologies
Description: DIODE GP 650V 30A TO247-3-1
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 47 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: PG-TO247-3-1
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 15 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Description: DIODE GP 650V 30A TO247-3-1
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 47 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: PG-TO247-3-1
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 15 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
auf Bestellung 19680 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
250+ | 2.11 EUR |
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Technische Details IDW15E65D2 Infineon Technologies
Description: DIODE GP 650V 30A TO247-3-1, Packaging: Bulk, Package / Case: TO-247-3, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 47 ns, Technology: Standard, Current - Average Rectified (Io): 30A, Supplier Device Package: PG-TO247-3-1, Operating Temperature - Junction: -40°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 15 A, Current - Reverse Leakage @ Vr: 40 µA @ 650 V.
Weitere Produktangebote IDW15E65D2 nach Preis ab 3.91 EUR bis 5.40 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||
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IDW15E65D2 | Hersteller : Infineon Technologies | Diodes - General Purpose, Power, Switching IGBT PRODUCTS Rapid Switching |
auf Bestellung 11 Stücke: Lieferzeit 10-14 Tag (e) |
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