IDW10G65C5FKSA1 Infineon Technologies

Description: DIODE SIL CARB 650V 10A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 300pF @ 1V, 1MHz, Current - Average Rectified (Io): 10A, Supplier Device Package: PG-TO247-3-41, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Discontinued at Digi-Key, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A, Current - Reverse Leakage @ Vr: 400 µA @ 650 V.