IDK08G65C5XTMA2 Infineon Technologies
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 650V 8A TO263-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 250pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: PG-TO263-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
Description: DIODE SIL CARB 650V 8A TO263-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 250pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: PG-TO263-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
auf Bestellung 997 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
4+ | 5.47 EUR |
10+ | 4.59 EUR |
100+ | 3.71 EUR |
500+ | 3.3 EUR |
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Technische Details IDK08G65C5XTMA2 Infineon Technologies
Description: DIODE SIL CARB 650V 8A TO263-2, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 250pF @ 1V, 1MHz, Current - Average Rectified (Io): 8A, Supplier Device Package: PG-TO263-2, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A.
Weitere Produktangebote IDK08G65C5XTMA2 nach Preis ab 2.97 EUR bis 6.12 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
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IDK08G65C5XTMA2 | Hersteller : Infineon Technologies | Schottky Diodes & Rectifiers SIC DIODES |
auf Bestellung 922 Stücke: Lieferzeit 10-14 Tag (e) |
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IDK08G65C5XTMA2 | Hersteller : Infineon Technologies | 5th Generation thinQ SiC Schottky Diode |
Produkt ist nicht verfügbar |
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IDK08G65C5XTMA2 | Hersteller : Infineon Technologies |
Description: DIODE SIL CARB 650V 8A TO263-2 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 250pF @ 1V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: PG-TO263-2 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A |
Produkt ist nicht verfügbar |