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IDH20G120C5XKSA1 Infineon Technologies
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Description: DIODE SIL CARB 1.2KV 56A TO220-1
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1050pF @ 1V, 1MHz
Current - Average Rectified (Io): 56A
Supplier Device Package: PG-TO220-2-1
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 123 µA @ 1200 V
auf Bestellung 1084 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2+ | 15.22 EUR |
50+ | 12.15 EUR |
100+ | 10.87 EUR |
500+ | 9.59 EUR |
1000+ | 8.63 EUR |
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Technische Details IDH20G120C5XKSA1 Infineon Technologies
Description: DIODE SIL CARB 1.2KV 56A TO220-1, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 1050pF @ 1V, 1MHz, Current - Average Rectified (Io): 56A, Supplier Device Package: PG-TO220-2-1, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A, Current - Reverse Leakage @ Vr: 123 µA @ 1200 V.
Weitere Produktangebote IDH20G120C5XKSA1 nach Preis ab 12.04 EUR bis 16.54 EUR
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IDH20G120C5XKSA1 | Hersteller : Infineon Technologies |
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auf Bestellung 319 Stücke: Lieferzeit 10-14 Tag (e) |
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IDH20G120C5XKSA1 | Hersteller : INFINEON TECHNOLOGIES |
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