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IDH16S60CAKSA1

IDH16S60CAKSA1 Infineon Technologies


idh16s60c_rev.2.0.pdf_folderid=db3a30431d8a6b3c011dbeca72db281a&fileid=db3a3043284aacd80128b08bbbbc5635.pdf Hersteller: Infineon Technologies
Description: DIODE SIL CARB 600V 16A TO220-2
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 650pF @ 1V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: PG-TO220-2-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
auf Bestellung 12385 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
89+5.34 EUR
Mindestbestellmenge: 89
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Technische Details IDH16S60CAKSA1 Infineon Technologies

Description: DIODE SIL CARB 600V 16A TO220-2, Packaging: Bulk, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 650pF @ 1V, 1MHz, Current - Average Rectified (Io): 16A, Supplier Device Package: PG-TO220-2-2, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A, Current - Reverse Leakage @ Vr: 200 µA @ 600 V.

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IDH16S60CAKSA1 Hersteller : ROCHESTER ELECTRONICS 1926798.pdf Description: ROCHESTER ELECTRONICS - IDH16S60CAKSA1 - IDH16S60C - COOLSIC SCHOTTKY DIODE
tariffCode: 85411000
productTraceability: No
rohsCompliant: YES
euEccn: TBC
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: TBC
SVHC: No SVHC (27-Jun-2024)
auf Bestellung 12385 Stücke:
Lieferzeit 14-21 Tag (e)