IDH09G65C5 Infineon Technologies
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Technische Details IDH09G65C5 Infineon Technologies
Category: THT Schottky diodes, Description: Diode: Schottky rectifying; SiC; THT; 650V; 9A; 82W; PG-TO220-2, Type of diode: Schottky rectifying, Technology: CoolSiC™ 5G; SiC, Mounting: THT, Max. off-state voltage: 650V, Load current: 9A, Power dissipation: 82W, Semiconductor structure: single diode, Case: PG-TO220-2, Kind of package: tube, Heatsink thickness: 1.17...137mm, Max. forward impulse current: 65A, Max. forward voltage: 1.8V, Leakage current: 1.8µA.
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IDH09G65C5 | Hersteller : INFINEON TECHNOLOGIES |
 Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 9A; 82W; PG-TO220-2 Type of diode: Schottky rectifying Technology: CoolSiC™ 5G; SiC Mounting: THT Max. off-state voltage: 650V Load current: 9A Power dissipation: 82W Semiconductor structure: single diode Case: PG-TO220-2 Kind of package: tube Heatsink thickness: 1.17...137mm Max. forward impulse current: 65A Max. forward voltage: 1.8V Leakage current: 1.8µA |
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