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IAUCN10S7N021ATMA1

IAUCN10S7N021ATMA1 Infineon Technologies

Infineon_IAUCN10S7N021_DataSheet_v01_10_EN-3445924.pdf Hersteller: Infineon Technologies
MOSFETs N
auf Bestellung 3570 Stücke:
Lieferzeit 10-14 Tag (e)
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1+6.71 EUR
10+ 5.63 EUR
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250+ 4.31 EUR
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Technische Details IAUCN10S7N021ATMA1 Infineon Technologies

Description: MOSFET_(75V 120V(, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 175A (Tj), Rds On (Max) @ Id, Vgs: 2.1mOhm @ 88A, 10V, Power Dissipation (Max): 217W (Tc), Vgs(th) (Max) @ Id: 3.2V @ 130µA, Supplier Device Package: PG-TDSON-8-53, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7153 pF @ 50 V, Qualification: AEC-Q101.

Weitere Produktangebote IAUCN10S7N021ATMA1 nach Preis ab 3.24 EUR bis 8.89 EUR

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Preis ohne MwSt
IAUCN10S7N021ATMA1 IAUCN10S7N021ATMA1 Hersteller : Infineon Technologies Description: MOSFET_(75V 120V(
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 175A (Tj)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 88A, 10V
Power Dissipation (Max): 217W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 130µA
Supplier Device Package: PG-TDSON-8-53
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7153 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 3315 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+8.89 EUR
10+ 5.96 EUR
25+ 5.19 EUR
100+ 4.34 EUR
250+ 3.93 EUR
500+ 3.67 EUR
1000+ 3.46 EUR
2500+ 3.24 EUR
Mindestbestellmenge: 2
IAUCN10S7N021ATMA1 IAUCN10S7N021ATMA1 Hersteller : Infineon Technologies Description: MOSFET_(75V 120V(
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 175A (Tj)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 88A, 10V
Power Dissipation (Max): 217W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 130µA
Supplier Device Package: PG-TDSON-8-53
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7153 pF @ 50 V
Qualification: AEC-Q101
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