auf Bestellung 9582 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 2.22 EUR |
| 10+ | 1.62 EUR |
| 100+ | 1.2 EUR |
| 500+ | 1.04 EUR |
| 1000+ | 0.94 EUR |
| 2500+ | 0.92 EUR |
| 5000+ | 0.87 EUR |
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Technische Details IAUC45N04S6L063HATMA1 Infineon Technologies
Description: MOSFET 2N-CH 40V 45A 8TDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 41W (Tc), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 45A (Tj), Input Capacitance (Ciss) (Max) @ Vds: 775pF @ 25V, Rds On (Max) @ Id, Vgs: 6.3mOhm @ 22A, 10V, Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2V @ 9µA, Supplier Device Package: PG-TDSON-8-57, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote IAUC45N04S6L063HATMA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| IAUC45N04S6L063HATMA1 | Hersteller : Infineon Technologies |
 Automotive Power Mosfet |
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| IAUC45N04S6L063HATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 15A; Idm: 134A; 41W Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 15A Pulsed drain current: 134A Power dissipation: 41W Case: PG-TDSON-8 Gate-source voltage: ±16V On-state resistance: 8.5mΩ Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5000 Stücke |
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IAUC45N04S6L063HATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET 2N-CH 40V 45A 8TDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 41W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 45A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 775pF @ 25V Rds On (Max) @ Id, Vgs: 6.3mOhm @ 22A, 10V Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2V @ 9µA Supplier Device Package: PG-TDSON-8-57 Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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IAUC45N04S6L063HATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET 2N-CH 40V 45A 8TDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 41W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 45A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 775pF @ 25V Rds On (Max) @ Id, Vgs: 6.3mOhm @ 22A, 10V Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2V @ 9µA Supplier Device Package: PG-TDSON-8-57 Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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| IAUC45N04S6L063HATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 15A; Idm: 134A; 41W Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 15A Pulsed drain current: 134A Power dissipation: 41W Case: PG-TDSON-8 Gate-source voltage: ±16V On-state resistance: 8.5mΩ Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |