HUF75631SK8

HUF75631SK8 Fairchild Semiconductor


FAIRS16097-1.pdf?t.download=true&u=5oefqw Hersteller: Fairchild Semiconductor
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 39mOhm @ 5.5A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1225 pF @ 25 V
auf Bestellung 4484 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
317+1.58 EUR
Mindestbestellmenge: 317
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Technische Details HUF75631SK8 Fairchild Semiconductor

Description: N-CHANNEL POWER MOSFET, Packaging: Bulk, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), Rds On (Max) @ Id, Vgs: 39mOhm @ 5.5A, 10V, Power Dissipation (Max): 2.5W (Ta), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 1225 pF @ 25 V.

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HUF75631SK8 Hersteller : FAIRCHILD FAIRS16097-1.pdf?t.download=true&u=5oefqw 07+ SO-8
auf Bestellung 21000 Stücke:
Lieferzeit 21-28 Tag (e)
HUF75631SK8 Hersteller : FAIRCHILD FAIRS16097-1.pdf?t.download=true&u=5oefqw SO-8
auf Bestellung 21000 Stücke:
Lieferzeit 21-28 Tag (e)
HUF75631SK8 Hersteller : INTERSIL FAIRS16097-1.pdf?t.download=true&u=5oefqw
auf Bestellung 11835 Stücke:
Lieferzeit 21-28 Tag (e)