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HUF75333P3 Fairchild Semiconductor
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Description: MOSFET N-CH 55V 66A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 66A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
auf Bestellung 139017 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
365+ | 1.33 EUR |
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Technische Details HUF75333P3 Fairchild Semiconductor
Description: MOSFET N-CH 55V 66A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 66A (Tc), Rds On (Max) @ Id, Vgs: 16mOhm @ 66A, 10V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V.
Weitere Produktangebote HUF75333P3 nach Preis ab 1.33 EUR bis 1.33 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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HUF75333P3 | Hersteller : Harris Corporation |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 66A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 66A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V |
auf Bestellung 2197 Stücke: Lieferzeit 10-14 Tag (e) |
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HUF75333P3 | Hersteller : FSC |
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auf Bestellung 800 Stücke: Lieferzeit 21-28 Tag (e) |
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HUF75333P3 Produktcode: 189444 |
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Produkt ist nicht verfügbar
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HUF75333P3 | Hersteller : ON Semiconductor |
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Produkt ist nicht verfügbar |
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HUF75333P3 | Hersteller : onsemi |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 66A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 66A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V |
Produkt ist nicht verfügbar |
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HUF75333P3 | Hersteller : onsemi / Fairchild |
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Produkt ist nicht verfügbar |