Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > HN4B01JE(TE85L,F)
HN4B01JE(TE85L,F)

HN4B01JE(TE85L,F) Toshiba Semiconductor and Storage

HN4B01JE_datasheet_en_20140301.pdf?did=22310&prodName=HN4B01JE Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP 50V 0.15A ESV PLN
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP (Emitter Coupled)
Operating Temperature: 150°C (TJ)
Power - Max: 100mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: ESV
auf Bestellung 3418 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
34+0.53 EUR
55+ 0.33 EUR
100+ 0.2 EUR
500+ 0.15 EUR
1000+ 0.13 EUR
2000+ 0.12 EUR
Mindestbestellmenge: 34
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Technische Details HN4B01JE(TE85L,F) Toshiba Semiconductor and Storage

Description: TRANS NPN/PNP 50V 0.15A ESV PLN, Packaging: Tape & Reel (TR), Package / Case: SOT-553, Mounting Type: Surface Mount, Transistor Type: 1 NPN, 1 PNP (Emitter Coupled), Operating Temperature: 150°C (TJ), Power - Max: 100mW, Current - Collector (Ic) (Max): 150mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V, Frequency - Transition: 80MHz, Supplier Device Package: ESV.

Weitere Produktangebote HN4B01JE(TE85L,F) nach Preis ab 0.074 EUR bis 0.59 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
HN4B01JE(TE85L,F) HN4B01JE(TE85L,F) Hersteller : Toshiba HN4B01JE_datasheet_en_20140301.pdf?did=22310&prodName=HN4B01JE Bipolar Transistors - BJT Vceo=-50V Vceo=50V
auf Bestellung 3870 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+0.59 EUR
10+ 0.41 EUR
100+ 0.17 EUR
1000+ 0.11 EUR
8000+ 0.086 EUR
24000+ 0.083 EUR
48000+ 0.074 EUR
Mindestbestellmenge: 5
HN4B01JE(TE85L,F) HN4B01JE(TE85L,F) Hersteller : Toshiba Semiconductor and Storage HN4B01JE_datasheet_en_20140301.pdf?did=22310&prodName=HN4B01JE Description: TRANS NPN/PNP 50V 0.15A ESV PLN
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP (Emitter Coupled)
Operating Temperature: 150°C (TJ)
Power - Max: 100mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: ESV
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