HN1D03FU,LF

HN1D03FU,LF Toshiba Semiconductor and Storage


HN1D03FU_datasheet_en_20210625.pdf?did=3661&prodName=HN1D03FU Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 80MA US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Pair CA + CC
Current - Average Rectified (Io) (per Diode): 80mA
Supplier Device Package: US6
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
auf Bestellung 3000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.1 EUR
Mindestbestellmenge: 3000
Produktrezensionen
Produktbewertung abgeben

Technische Details HN1D03FU,LF Toshiba Semiconductor and Storage

Description: DIODE ARRAY GP 80V 80MA US6, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Speed: Small Signal =< 200mA (Io), Any Speed, Reverse Recovery Time (trr): 4 ns, Technology: Standard, Diode Configuration: 2 Pair CA + CC, Current - Average Rectified (Io) (per Diode): 80mA, Supplier Device Package: US6, Operating Temperature - Junction: 125°C (Max), Voltage - DC Reverse (Vr) (Max): 80 V, Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA, Current - Reverse Leakage @ Vr: 500 nA @ 80 V.

Weitere Produktangebote HN1D03FU,LF nach Preis ab 0.083 EUR bis 0.59 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
HN1D03FU,LF HN1D03FU,LF Hersteller : Toshiba Semiconductor and Storage HN1D03FU_datasheet_en_20210625.pdf?did=3661&prodName=HN1D03FU Description: DIODE ARRAY GP 80V 80MA US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Pair CA + CC
Current - Average Rectified (Io) (per Diode): 80mA
Supplier Device Package: US6
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
auf Bestellung 4415 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
32+0.56 EUR
45+ 0.39 EUR
100+ 0.2 EUR
500+ 0.16 EUR
1000+ 0.12 EUR
Mindestbestellmenge: 32
HN1D03FU,LF HN1D03FU,LF Hersteller : Toshiba HN1D03FU_datasheet_en_20210625-1916548.pdf Diodes - General Purpose, Power, Switching High Speed Switching Diode
auf Bestellung 8378 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+0.59 EUR
10+ 0.42 EUR
100+ 0.16 EUR
1000+ 0.13 EUR
3000+ 0.1 EUR
9000+ 0.086 EUR
24000+ 0.083 EUR
Mindestbestellmenge: 5