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HN1C01FU-Y,LF

HN1C01FU-Y,LF Toshiba

HN1C01FU_datasheet_en_20210706-1627341.pdf Hersteller: Toshiba
Bipolar Transistors - BJT NPN + NPN Ind. Transistor, VCEO=50V, IC=0.15A, hFE=120 to 400 in SOT-26 (SM6) package
auf Bestellung 2674 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+0.23 EUR
18+0.16 EUR
100+0.08 EUR
1000+0.07 EUR
3000+0.06 EUR
9000+0.05 EUR
24000+0.04 EUR
Mindestbestellmenge: 13
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Technische Details HN1C01FU-Y,LF Toshiba

Description: NPN + NPN IND. TRANSISTOR VCEO50, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 2 NPN (Dual), Operating Temperature: 125°C (TJ), Power - Max: 200mW, Current - Collector (Ic) (Max): 150mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V, Frequency - Transition: 80MHz, Supplier Device Package: US6, Part Status: Active.

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HN1C01FU-Y,LF HN1C01FU-Y,LF Hersteller : Toshiba Semiconductor and Storage HN1C01FU_datasheet_en_20210706.pdf?did=19152&prodName=HN1C01FU Description: NPN + NPN IND. TRANSISTOR VCEO50
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 125°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: US6
Part Status: Active
auf Bestellung 12276 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
77+0.23 EUR
112+0.16 EUR
167+0.11 EUR
500+0.08 EUR
1000+0.07 EUR
Mindestbestellmenge: 77
HN1C01FU-Y,LF HN1C01FU-Y,LF Hersteller : Toshiba Semiconductor and Storage HN1C01FU_datasheet_en_20210706.pdf?did=19152&prodName=HN1C01FU Description: NPN + NPN IND. TRANSISTOR VCEO50
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 125°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: US6
Part Status: Active
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