HN1B04FU-GR,LXHF

HN1B04FU-GR,LXHF Toshiba Semiconductor and Storage


HN1B04FU_datasheet_en_20220304.pdf?did=19150&prodName=HN1B04FU Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q PNP + NPN TR VCEO:-50
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 150MHz, 120MHz
Supplier Device Package: US6
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.14 EUR
Mindestbestellmenge: 3000
Produktrezensionen
Produktbewertung abgeben

Technische Details HN1B04FU-GR,LXHF Toshiba Semiconductor and Storage

Description: AUTO AEC-Q PNP + NPN TR VCEO:-50, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 1 NPN, 1 PNP, Power - Max: 200mW, Current - Collector (Ic) (Max): 150mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V, Frequency - Transition: 150MHz, 120MHz, Supplier Device Package: US6, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote HN1B04FU-GR,LXHF nach Preis ab 0.14 EUR bis 0.67 EUR

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HN1B04FU-GR,LXHF HN1B04FU-GR,LXHF Hersteller : Toshiba Semiconductor and Storage HN1B04FU_datasheet_en_20220304.pdf?did=19150&prodName=HN1B04FU Description: AUTO AEC-Q PNP + NPN TR VCEO:-50
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 150MHz, 120MHz
Supplier Device Package: US6
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5998 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
38+0.48 EUR
49+0.36 EUR
100+0.22 EUR
500+0.20 EUR
1000+0.14 EUR
Mindestbestellmenge: 38
HN1B04FU-GR,LXHF HN1B04FU-GR,LXHF Hersteller : Toshiba HN1B04FU_datasheet_en_20220304-1316048.pdf Bipolar Transistors - BJT AUTO AEC-Q PNP + NPN Tr VCEO:-50V Ic:-0.15A hFE:200-400 SOT-363 (US6)
auf Bestellung 5570 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+0.67 EUR
10+0.52 EUR
100+0.29 EUR
1000+0.20 EUR
3000+0.17 EUR
9000+0.15 EUR
Mindestbestellmenge: 5