HN1B01FU-GR,LXHF

HN1B01FU-GR,LXHF Toshiba Semiconductor and Storage


HN1B01FU_datasheet_en_20220311.pdf?did=19148&prodName=HN1B01FU Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q PNP + NPN TR VCEO:-50
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA / 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 120MHz, 150MHz
Supplier Device Package: US6
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.074 EUR
Mindestbestellmenge: 3000
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Technische Details HN1B01FU-GR,LXHF Toshiba Semiconductor and Storage

Description: AUTO AEC-Q PNP + NPN TR VCEO:-50, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 1 NPN, 1 PNP, Power - Max: 200mW, Current - Collector (Ic) (Max): 150mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA / 250mV @ 10mA, 100mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V, Frequency - Transition: 120MHz, 150MHz, Supplier Device Package: US6, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote HN1B01FU-GR,LXHF nach Preis ab 0.086 EUR bis 0.59 EUR

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HN1B01FU-GR,LXHF HN1B01FU-GR,LXHF Hersteller : Toshiba Semiconductor and Storage HN1B01FU_datasheet_en_20220311.pdf?did=19148&prodName=HN1B01FU Description: AUTO AEC-Q PNP + NPN TR VCEO:-50
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA / 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 120MHz, 150MHz
Supplier Device Package: US6
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5948 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
44+0.4 EUR
62+ 0.29 EUR
122+ 0.14 EUR
500+ 0.12 EUR
1000+ 0.088 EUR
Mindestbestellmenge: 44
HN1B01FU-GR,LXHF HN1B01FU-GR,LXHF Hersteller : Toshiba HN1B01FU_datasheet_en_20220311-1916404.pdf Bipolar Transistors - BJT AUTO AEC-Q PNP + NPN Tr VCEO:-50V Ic:-0.15A hFE:120-400 SOT-363 (US6)
auf Bestellung 5950 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+0.59 EUR
10+ 0.43 EUR
100+ 0.24 EUR
500+ 0.16 EUR
1000+ 0.12 EUR
3000+ 0.097 EUR
9000+ 0.086 EUR
Mindestbestellmenge: 5