HIP2100EIBZT Renesas Electronics Corporation
Hersteller: Renesas Electronics CorporationDescription: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 9V ~ 14V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 114 V
Supplier Device Package: 8-SOIC-EP
Rise / Fall Time (Typ): 10ns, 10ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 4V, 7V
Current - Peak Output (Source, Sink): 2A, 2A
DigiKey Programmable: Not Verified
auf Bestellung 2439 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 7.06 EUR |
| 10+ | 6.34 EUR |
| 25+ | 6 EUR |
| 100+ | 5.2 EUR |
| 250+ | 4.93 EUR |
| 500+ | 4.43 EUR |
| 1000+ | 3.73 EUR |
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Technische Details HIP2100EIBZT Renesas Electronics Corporation
Description: IC GATE DRVR HALF-BRIDGE 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Voltage - Supply: 9V ~ 14V, Input Type: Non-Inverting, High Side Voltage - Max (Bootstrap): 114 V, Supplier Device Package: 8-SOIC-EP, Rise / Fall Time (Typ): 10ns, 10ns, Channel Type: Independent, Driven Configuration: Half-Bridge, Number of Drivers: 2, Gate Type: N-Channel MOSFET, Logic Voltage - VIL, VIH: 4V, 7V, Current - Peak Output (Source, Sink): 2A, 2A, DigiKey Programmable: Not Verified.
Weitere Produktangebote HIP2100EIBZT
| Foto | Bezeichnung | Hersteller | Beschreibung |
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HIP2100EIBZT | Hersteller : Renesas Electronics Corporation |
Description: IC GATE DRVR HALF-BRIDGE 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Supply: 9V ~ 14V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 114 V Supplier Device Package: 8-SOIC-EP Rise / Fall Time (Typ): 10ns, 10ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: N-Channel MOSFET Logic Voltage - VIL, VIH: 4V, 7V Current - Peak Output (Source, Sink): 2A, 2A DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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HIP2100EIBZT | Hersteller : Renesas / Intersil |
Gate Drivers 100V H-BRDG DRVR 8LD EP |
Produkt ist nicht verfügbar |