HGTP7N60B3D

HGTP7N60B3D Fairchild Semiconductor


FAIRS45389-1.pdf?t.download=true&u=5oefqw Hersteller: Fairchild Semiconductor
Description: N-CHANNEL IGBT
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 37 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 7A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 26ns/130ns
Switching Energy: 160µJ (on), 120µJ (off)
Test Condition: 480V, 7A, 50Ohm, 15V
Gate Charge: 23 nC
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 56 A
Power - Max: 60 W
auf Bestellung 2347 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
278+1.77 EUR
Mindestbestellmenge: 278
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Technische Details HGTP7N60B3D Fairchild Semiconductor

Description: IGBT, 14A, 600V, N-CHANNEL, TO-2, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 37 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 7A, Supplier Device Package: TO-220AB, Td (on/off) @ 25°C: 26ns/130ns, Switching Energy: 160µJ (on), 120µJ (off), Test Condition: 480V, 7A, 50Ohm, 15V, Gate Charge: 37 nC, Current - Collector (Ic) (Max): 14 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 56 A, Power - Max: 60 W.

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HGTP7N60B3D HGTP7N60B3D Hersteller : Harris Corporation FAIRS45389-1.pdf?t.download=true&u=5oefqw Description: IGBT, 14A, 600V, N-CHANNEL, TO-2
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 37 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 7A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 26ns/130ns
Switching Energy: 160µJ (on), 120µJ (off)
Test Condition: 480V, 7A, 50Ohm, 15V
Gate Charge: 37 nC
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 56 A
Power - Max: 60 W
auf Bestellung 16763 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
278+1.77 EUR
Mindestbestellmenge: 278
HGTP7N60B3D HGTP7N60B3D Hersteller : onsemi HGTP7N60B3D%2C%20HGT1S7N60B3DS.pdf Description: IGBT 600V 14A 60W TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 37 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 7A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 26ns/130ns
Switching Energy: 160µJ (on), 120µJ (off)
Test Condition: 480V, 7A, 50Ohm, 15V
Gate Charge: 23 nC
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 56 A
Power - Max: 60 W
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HGTP7N60B3D HGTP7N60B3D Hersteller : onsemi / Fairchild HGTP7N60B3D-1295464.pdf IGBT Transistors PWR IGBT 14A 600V N-CHANNEL
Produkt ist nicht verfügbar