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HGT1S3N60A4DS9A Fairchild Semiconductor
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Description: N-CHANNEL IGBT
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 29 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 3A
Supplier Device Package: TO-263 (D2Pak)
Td (on/off) @ 25°C: 6ns/73ns
Switching Energy: 37µJ (on), 25µJ (off)
Test Condition: 390V, 3A, 50Ohm, 15V
Gate Charge: 21 nC
Current - Collector (Ic) (Max): 17 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 70 W
auf Bestellung 4713 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
167+ | 2.95 EUR |
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Technische Details HGT1S3N60A4DS9A Fairchild Semiconductor
Description: N-CHANNEL IGBT, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 29 ns, Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 3A, Supplier Device Package: TO-263 (D2Pak), Td (on/off) @ 25°C: 6ns/73ns, Switching Energy: 37µJ (on), 25µJ (off), Test Condition: 390V, 3A, 50Ohm, 15V, Gate Charge: 21 nC, Current - Collector (Ic) (Max): 17 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 40 A, Power - Max: 70 W.
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HGT1S3N60A4DS9A | Hersteller : onsemi / Fairchild |
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