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HFGM200D12V3

HFGM200D12V3 HUAJING


Hersteller: HUAJING
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Application: for UPS; Inverter
Case: V3 62MM
Technology: PT
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±30V
Collector current: 200A
Pulsed collector current: 400A
Anzahl je Verpackung: 1 Stücke
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Technische Details HFGM200D12V3 HUAJING

Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A, Application: for UPS; Inverter, Case: V3 62MM, Technology: PT, Electrical mounting: FASTON connectors; screw, Mechanical mounting: screw, Type of module: IGBT, Topology: IGBT half-bridge, Max. off-state voltage: 1.2kV, Semiconductor structure: transistor/transistor, Gate-emitter voltage: ±30V, Collector current: 200A, Pulsed collector current: 400A, Anzahl je Verpackung: 1 Stücke.

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HFGM200D12V3 HFGM200D12V3 Hersteller : HUAJING Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Application: for UPS; Inverter
Case: V3 62MM
Technology: PT
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±30V
Collector current: 200A
Pulsed collector current: 400A
Produkt ist nicht verfügbar