HFGM100D12V1 HUAJING
Hersteller: HUAJING
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Application: for UPS; Inverter
Case: V1
Technology: PT
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±30V
Collector current: 100A
Pulsed collector current: 200A
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Application: for UPS; Inverter
Case: V1
Technology: PT
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±30V
Collector current: 100A
Pulsed collector current: 200A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Technische Details HFGM100D12V1 HUAJING
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A, Application: for UPS; Inverter, Case: V1, Technology: PT, Electrical mounting: FASTON connectors; screw, Mechanical mounting: screw, Type of module: IGBT, Topology: IGBT half-bridge, Max. off-state voltage: 1.2kV, Semiconductor structure: transistor/transistor, Gate-emitter voltage: ±30V, Collector current: 100A, Pulsed collector current: 200A, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote HFGM100D12V1
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
HFGM100D12V1 | Hersteller : HUAJING |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A Application: for UPS; Inverter Case: V1 Technology: PT Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±30V Collector current: 100A Pulsed collector current: 200A |
Produkt ist nicht verfügbar |