HFA3102BZ Renesas / Intersil
auf Bestellung 852 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 14.15 EUR |
| 10+ | 12.13 EUR |
| 25+ | 12.04 EUR |
| 100+ | 10.12 EUR |
| 250+ | 10.07 EUR |
| 500+ | 8.92 EUR |
| 1000+ | 8.01 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details HFA3102BZ Renesas / Intersil
Description: RF TRANS 6 NPN 12V 10GHZ 14SOIC, Packaging: Tube, Package / Case: 14-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Transistor Type: 6 NPN, Operating Temperature: 150°C (TJ), Gain: 12.4dB ~ 17.5dB, Power - Max: 250mW, Current - Collector (Ic) (Max): 30mA, Voltage - Collector Emitter Breakdown (Max): 12V, DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 3V, Frequency - Transition: 10GHz, Noise Figure (dB Typ @ f): 1.8dB ~ 2.1dB @ 500MHz ~ 1GHz, Supplier Device Package: 14-SOIC.
Weitere Produktangebote HFA3102BZ nach Preis ab 8.99 EUR bis 14.26 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
HFA3102BZ | Hersteller : Renesas Electronics Corporation |
 Description: RF TRANS 6 NPN 12V 10GHZ 14SOICPackaging: Tube Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Transistor Type: 6 NPN Operating Temperature: 150°C (TJ) Gain: 12.4dB ~ 17.5dB Power - Max: 250mW Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 12V DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 3V Frequency - Transition: 10GHz Noise Figure (dB Typ @ f): 1.8dB ~ 2.1dB @ 500MHz ~ 1GHz Supplier Device Package: 14-SOIC |
auf Bestellung 720 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
| HFA3102BZ | Hersteller : Intersil |
SOIC 14/I°/Dual Long-Tailed Pair Transistor Array HFA3102 Anzahl je Verpackung: 50 Stücke |
Produkt ist nicht verfügbar |
||||||||||||
| HFA3102BZ | Hersteller : RENESAS |
Category: NPN SMD transistors Description: Transistor: NPN x6; bipolar; RF; 8V; 30mA; 250mW; SO14 Type of transistor: NPN x6 Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 8V Collector current: 30mA Power dissipation: 0.25W Case: SO14 Current gain: 70 Mounting: SMD Frequency: 10GHz Features of semiconductor devices: dual long-tailed pair transistor array Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||
| HFA3102BZ | Hersteller : RENESAS |
Category: NPN SMD transistors Description: Transistor: NPN x6; bipolar; RF; 8V; 30mA; 250mW; SO14 Type of transistor: NPN x6 Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 8V Collector current: 30mA Power dissipation: 0.25W Case: SO14 Current gain: 70 Mounting: SMD Frequency: 10GHz Features of semiconductor devices: dual long-tailed pair transistor array |
Produkt ist nicht verfügbar |