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H11A817 onsemi
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Description: OPTOISO 5.3KV TRANSISTOR 4DIP
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5300Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 200mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 70V
Rise / Fall Time (Typ): 2.4µs, 2.4µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
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Technische Details H11A817 onsemi
Description: OPTOISO 5.3KV TRANSISTOR 4DIP, Packaging: Tube, Package / Case: 4-DIP (0.300", 7.62mm), Output Type: Transistor, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 100°C, Voltage - Forward (Vf) (Typ): 1.2V, Input Type: DC, Current - Output / Channel: 50mA, Voltage - Isolation: 5300Vrms, Current Transfer Ratio (Min): 50% @ 5mA, Vce Saturation (Max): 200mV, Current Transfer Ratio (Max): 600% @ 5mA, Supplier Device Package: 4-DIP, Voltage - Output (Max): 70V, Rise / Fall Time (Typ): 2.4µs, 2.4µs, Part Status: Obsolete, Number of Channels: 1, Current - DC Forward (If) (Max): 50 mA.
Weitere Produktangebote H11A817
Foto | Bezeichnung | Hersteller | Beschreibung |
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H11A817 | Hersteller : onsemi / Fairchild |
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Produkt ist nicht verfügbar |