GT105N10F Goford Semiconductor
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 100V 33A TO-220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 11A, 10V
Power Dissipation (Max): 20.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Description: MOSFET N-CH 100V 33A TO-220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 11A, 10V
Power Dissipation (Max): 20.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
auf Bestellung 60000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
2000+ | 0.64 EUR |
6000+ | 0.61 EUR |
16000+ | 0.59 EUR |
30000+ | 0.53 EUR |
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Technische Details GT105N10F Goford Semiconductor
Description: MOSFET N-CH 100V 33A TO-220F, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 33A (Tc), Rds On (Max) @ Id, Vgs: 10.5mOhm @ 11A, 10V, Power Dissipation (Max): 20.8W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-220F, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V.
Weitere Produktangebote GT105N10F nach Preis ab 0.64 EUR bis 2.01 EUR
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GT105N10F | Hersteller : Goford Semiconductor |
Description: N100V,RD(MAX)<10.5M@10V,RD(MAX)< Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 10.5mOhm @ 11A, 10V Power Dissipation (Max): 20.8W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-220F Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V |
auf Bestellung 57 Stücke: Lieferzeit 10-14 Tag (e) |
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GT105N10F | Hersteller : GOFORD Semiconductor | N-CH,100V,33A,RD(max) Less Than 10.5mOhm at 10V,RD(max) Less Than 15mOhm at 4.5V,VTH 1.0V to 2.5V, TO-220F |
auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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