GT025N06D5 Goford Semiconductor
Hersteller: Goford Semiconductor
Description: N60V,RD(MAX)<2.7M@10V,RD(MAX)<3.
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5125 pF @ 30 V
Description: N60V,RD(MAX)<2.7M@10V,RD(MAX)<3.
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5125 pF @ 30 V
auf Bestellung 7066 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
6+ | 3.47 EUR |
10+ | 2.35 EUR |
100+ | 1.67 EUR |
500+ | 1.38 EUR |
1000+ | 1.28 EUR |
2000+ | 1.23 EUR |
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Technische Details GT025N06D5 Goford Semiconductor
Description: N60V,RD(MAX).
Weitere Produktangebote GT025N06D5
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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GT025N06D5 | Hersteller : Goford Semiconductor |
Description: N60V,RD(MAX)<2.7M@10V,RD(MAX)<3. Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN (4.9x5.75) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5125 pF @ 30 V |
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