GSIB660N-M3/45 Vishay General Semiconductor - Diodes Division
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Description: BRIDGE RECT 1P 600V 6A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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Technische Details GSIB660N-M3/45 Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 6A GSIB-5S, Packaging: Tube, Package / Case: 4-SIP, GSIB-5S, Mounting Type: Through Hole, Diode Type: Single Phase, Operating Temperature: -55°C ~ 150°C (TJ), Technology: Standard, Supplier Device Package: GSIB-5S, Part Status: Active, Voltage - Peak Reverse (Max): 600 V, Current - Average Rectified (Io): 6 A, Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A, Current - Reverse Leakage @ Vr: 10 µA @ 600 V.
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Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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GSIB660N-M3/45 | Hersteller : Vishay General Semiconductor |
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