GSGP0R703 Good-Ark Semiconductor
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 282.00A, 3
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 282A (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 30A, 10V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.86)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9045 pF @ 15 V
Description: MOSFET, N-CH, SINGLE, 282.00A, 3
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 282A (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 30A, 10V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.86)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9045 pF @ 15 V
auf Bestellung 4990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
7+ | 2.69 EUR |
10+ | 2.21 EUR |
100+ | 1.72 EUR |
500+ | 1.45 EUR |
1000+ | 1.19 EUR |
2000+ | 1.12 EUR |
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Technische Details GSGP0R703 Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 282.00A, 3, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 282A (Tc), Rds On (Max) @ Id, Vgs: 0.7mOhm @ 30A, 10V, Power Dissipation (Max): 139W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 250µA, Supplier Device Package: 8-PPAK (5.1x5.86), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9045 pF @ 15 V.
Weitere Produktangebote GSGP0R703
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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GSGP0R703 | Hersteller : Good-Ark Semiconductor |
Description: MOSFET, N-CH, SINGLE, 282.00A, 3 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 282A (Tc) Rds On (Max) @ Id, Vgs: 0.7mOhm @ 30A, 10V Power Dissipation (Max): 139W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: 8-PPAK (5.1x5.86) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9045 pF @ 15 V |
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