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GSFN3019

GSFN3019 Good-Ark Semiconductor

GSFN3019.pdf Hersteller: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -30.00A, -
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 8A, 10V
Power Dissipation (Max): 27W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 250µA
Supplier Device Package: 8-PPAK (3.1x3.05)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 15 V
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Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5000+0.16 EUR
10000+ 0.14 EUR
Mindestbestellmenge: 5000
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Technische Details GSFN3019 Good-Ark Semiconductor

Description: MOSFET, P-CH, SINGLE, -30.00A, -, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 19mOhm @ 8A, 10V, Power Dissipation (Max): 27W (Tc), Vgs(th) (Max) @ Id: 2.9V @ 250µA, Supplier Device Package: 8-PPAK (3.1x3.05), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 15 V.

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GSFN3019 GSFN3019 Hersteller : Good-Ark Semiconductor GSFN3019.pdf Description: MOSFET, P-CH, SINGLE, -30.00A, -
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 8A, 10V
Power Dissipation (Max): 27W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 250µA
Supplier Device Package: 8-PPAK (3.1x3.05)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 15 V
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