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GSFN26010

GSFN26010 Good-Ark Semiconductor

GSFN26010.pdf Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 25.00A, 10
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 10A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-PPAK (3.1x3.05)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1355 pF @ 50 V
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5000+0.28 EUR
10000+ 0.26 EUR
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Technische Details GSFN26010 Good-Ark Semiconductor

Description: MOSFET, N-CH, SINGLE, 25.00A, 10, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 25A (Tc), Rds On (Max) @ Id, Vgs: 26mOhm @ 10A, 10V, Power Dissipation (Max): 35W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 250µA, Supplier Device Package: 8-PPAK (3.1x3.05), Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1355 pF @ 50 V.

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GSFN26010 GSFN26010 Hersteller : Good-Ark Semiconductor GSFN26010.pdf Description: MOSFET, N-CH, SINGLE, 25.00A, 10
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 10A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-PPAK (3.1x3.05)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1355 pF @ 50 V
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