GSFK3420

GSFK3420 Good-Ark Semiconductor


GSFK3420.pdf Hersteller: Good-Ark Semiconductor
Description: MOSFET N/P-CH 30V 0.8A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
FET Feature: Standard
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
Configuration: N and P-Channel Complementary
Power - Max: 275mW (Tc)
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc), 400mA (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 146pF @ 15V
Rds On (Max) @ Id, Vgs: 450mOhm @ 300mA, 4.5V, 1Ohm @ 300mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 4.5V, 6.2nC @ 4.5V
auf Bestellung 3000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.14 EUR
Mindestbestellmenge: 3000
Produktrezensionen
Produktbewertung abgeben

Technische Details GSFK3420 Good-Ark Semiconductor

Description: MOSFET N/P-CH 30V 0.8A SOT363, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 30V, FET Feature: Standard, Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: SOT-363, Part Status: Active, Configuration: N and P-Channel Complementary, Power - Max: 275mW (Tc), Current - Continuous Drain (Id) @ 25°C: 800mA (Tc), 400mA (Tc), Input Capacitance (Ciss) (Max) @ Vds: 146pF @ 15V, Rds On (Max) @ Id, Vgs: 450mOhm @ 300mA, 4.5V, 1Ohm @ 300mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 4.5V, 6.2nC @ 4.5V.

Weitere Produktangebote GSFK3420 nach Preis ab 0.15 EUR bis 0.62 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
GSFK3420 GSFK3420 Hersteller : Good-Ark Semiconductor GSFK3420.pdf Description: MOSFET N/P-CH 30V 0.8A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 275mW (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc), 400mA (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 146pF @ 15V
Rds On (Max) @ Id, Vgs: 450mOhm @ 300mA, 4.5V, 1Ohm @ 300mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 4.5V, 6.2nC @ 4.5V
FET Feature: Standard
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
auf Bestellung 5950 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
29+0.62 EUR
39+ 0.46 EUR
43+ 0.42 EUR
100+ 0.29 EUR
250+ 0.24 EUR
500+ 0.2 EUR
1000+ 0.15 EUR
Mindestbestellmenge: 29