auf Bestellung 7790 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 14.43 EUR |
| 10+ | 12.32 EUR |
| 25+ | 11.67 EUR |
| 100+ | 10.26 EUR |
| 250+ | 9.86 EUR |
| 500+ | 9.06 EUR |
| 1000+ | 8.25 EUR |
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Technische Details GNP1070TC-ZE2 ROHM Semiconductor
Description: ECOGAN, 650V 20A DFN8080K, E-MOD, Packaging: Tape & Reel (TR), Package / Case: 8-PowerDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 98mOhm @ 1.9A, 5.5V, Power Dissipation (Max): 56W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 18mA, Supplier Device Package: DFN8080K, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, 5.5V, Vgs (Max): +6V, -10V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 6 V, Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 400 V.
Weitere Produktangebote GNP1070TC-ZE2 nach Preis ab 8.71 EUR bis 27.48 EUR
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GNP1070TC-ZE2 | Hersteller : Rohm Semiconductor |
 Description: ECOGAN, 650V 20A DFN8080K, E-MODPackaging: Cut Tape (CT) Package / Case: 8-PowerDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 98mOhm @ 1.9A, 5.5V Power Dissipation (Max): 56W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 18mA Supplier Device Package: DFN8080K Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 5.5V Vgs (Max): +6V, -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 400 V |
auf Bestellung 2524 Stücke: Lieferzeit 10-14 Tag (e) |
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GNP1070TC-ZE2 | Hersteller : ROHM |
Description: ROHM - GNP1070TC-ZE2 - Galliumnitrid (GaN)-Transistor, 650 V, 20 A, 0.07 ohm, 5.2 nC, DFN8080K, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 650V rohsCompliant: Y-EX Dauer-Drainstrom Id: 20A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 euEccn: NLR Gate-Ladung, typ.: 5.2nC Bauform - Transistor: DFN8080K Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: No Drain-Source-Durchgangswiderstand: 0.07ohm SVHC: Boric acid (14-Jun-2023) |
auf Bestellung 152 Stücke: Lieferzeit 14-21 Tag (e) |
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GNP1070TC-ZE2 | Hersteller : ROHM |
Description: ROHM - GNP1070TC-ZE2 - Galliumnitrid (GaN)-Transistor, 650 V, 20 A, 0.07 ohm, 5.2 nC, DFN8080K, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 650V rohsCompliant: Y-EX Dauer-Drainstrom Id: 20A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 euEccn: NLR Gate-Ladung, typ.: 5.2nC Bauform - Transistor: DFN8080K Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: No Drain-Source-Durchgangswiderstand: 0.07ohm SVHC: Boric acid (14-Jun-2023) |
auf Bestellung 152 Stücke: Lieferzeit 14-21 Tag (e) |
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| GNP1070TC-ZE2 | Hersteller : Rohm Semiconductor |
Trans JFET N-CH 650V 20A GaN 8-Pin DFN-K EP T/R |
auf Bestellung 25 Stücke: Lieferzeit 14-21 Tag (e) |
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| GNP1070TC-ZE2 | Hersteller : Rohm Semiconductor |
Trans JFET N-CH 650V 20A GaN 8-Pin DFN-K EP T/R |
auf Bestellung 168 Stücke: Lieferzeit 14-21 Tag (e) |
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GNP1070TC-ZE2 | Hersteller : Rohm Semiconductor |
Description: ECOGAN, 650V 20A DFN8080K, E-MOD Packaging: Tape & Reel (TR) Package / Case: 8-PowerDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 98mOhm @ 1.9A, 5.5V Power Dissipation (Max): 56W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 18mA Supplier Device Package: DFN8080K Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 5.5V Vgs (Max): +6V, -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 400 V |
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