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GI250-3-E3/54 Vishay General Semiconductor - Diodes Division
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Description: DIODE GEN PURP 3KV 250MA DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 3pF @ 4V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 3000 V
Voltage - Forward (Vf) (Max) @ If: 3.5 V @ 250 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3000 V
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Technische Details GI250-3-E3/54 Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 3KV 250MA DO204AL, Packaging: Tape & Reel (TR), Package / Case: DO-204AL, DO-41, Axial, Mounting Type: Through Hole, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 2 µs, Technology: Standard, Capacitance @ Vr, F: 3pF @ 4V, 1MHz, Current - Average Rectified (Io): 250mA, Supplier Device Package: DO-204AL (DO-41), Operating Temperature - Junction: -65°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 3000 V, Voltage - Forward (Vf) (Max) @ If: 3.5 V @ 250 mA, Current - Reverse Leakage @ Vr: 5 µA @ 3000 V.
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GI250-3-E3/54 | Hersteller : Vishay General Semiconductor |
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